PART |
Description |
Maker |
BSP030-04 BSP030 |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应 N-channel enhancement mode field-effect transistor From old datasheet system
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NXP Semiconductors N.V. Philips
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PHX9NQ20T PHF9NQ20 PHF9NQ20T PHX9NQ20T127 |
N-channel TrenchMOS(TM) transistor N-channel TrenchMOS transistor 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, FPAK-3
|
Philips NXP Semiconductors N.V.
|
BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. TrenchMOS TM standard level FET
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA N-channel TrenchMOS logic level FET N-channel TrenchMOS⑩ logic level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PHW35NQ20T PHW35NQ20T_1 |
N-channel TrenchMOS(tm) transistor From old datasheet system N-channel TrenchMOS TM transistor N-channel TrenchMOS transistor
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PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BUK6226-75C BUK6226-75C-15 |
N-channel TrenchMOS FET N-channel TrenchMOS FET Rev. 01 ?4 October 2010
|
NXP Semiconductors N.V.
|
IRF530N |
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3 N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
PHW80NQ10T PHW80NQ10T_1 |
N-channel TrenchMOS(tm) transistor From old datasheet system N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
BUK7524-55A BUK7624-55A BUK7624-55A118 |
TrenchMOS(tm) standard level FET TrenchMOS TM standard level FET TrenchMOS standard level FET 47 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012 From old datasheet system TrenchMOS (tm) logic level FET
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
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NXP Semiconductors N.V.
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